PD57060

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Continuous Drain Current : 7 A
Package / Case : PowerSO-10RF (Formed Lead)
Output Power : 60 W
Gain : 14.3 dB at 945 MHz


Specifications




Description

The PD57060 is designed as one kind of RF power transistor that has four points of features:(1)excellent thermal stability; (2)common source configuration; (3)Pout = 60 W with 14.3 dB gain @ 945 MHz / 28V; (4)new RF plastic package. Also this device can be used in high gain, broad band commercial and industrial applications.

The absolute maximum ratings of the PD57060 can be summarized as:(1)Drain-Source Voltage: 65 V;(2)Gate-Source Voltage: ±20 V;(3)Drain Current: 7 A;(4)Power Dissipation (@ Tc = 70°C): 79 W;(5)Max. Operating Junction Temperature: 165 °C;(6)Storage Temperature: -65 to +150 °C;(7)Junction -Case Thermal Resistance: 1.0 °C/W. If you want to know more information about the PD57060, please download the datasheet in www.seekic.com or www.chinaicmart.com .