Features: • EXCELLENT THERMAL STABILITY• COMMON SOURCE CONFIGURATION• POUT = 3 W WITH 12 dB gain @ 500 MHz• NEW LEADLESS PLASTIC PACKAGEPinoutSpecifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 25 V VGS Gate-Source Vo...
PD54003-01: Features: • EXCELLENT THERMAL STABILITY• COMMON SOURCE CONFIGURATION• POUT = 3 W WITH 12 dB gain @ 500 MHz• NEW LEADLESS PLASTIC PACKAGEPinoutSpecifications Symbol ...
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Symbol |
Parameter |
Value |
Unit |
V(BR)DSS |
Drain-Source Voltage |
25 |
V |
VGS |
Gate-Source Voltage |
±20 |
V |
ID |
Drain Current |
4 |
A |
PDISS |
Power Dissipation (@ Tc = 70°C) |
TBD |
W |
Tstg |
Storage temperature |
-65to150 |
°C |
Tj |
Max. operating junction temperature |
150 |
°C |
The PD54003-01 is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003-01 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™.
PD54003-01's superior linearity performance makes it an ideal solution for portable radio.