PD54003L

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Frequency : 1 GHz
Gate-Source Breakdown Voltage : 15 V
Drain-Source Breakdown Voltage : 25 V
Gain : 20 dB at 500 MHz
Output Power : 3 W
Continuous Drain Current : 4 A
Package / Case : PowerFLAT (5x5)


Features:

·  EXCELLENT THERMAL STABILITY
·  COMMON SOURCE CONFIGURATION
·  POUT = 3 W WITH 20 dB gain @ 500 MHz
·  NEW LEADLESS PLASTIC PACKAGE
·  ESD PROTECTION
·  SUPPLIED IN TAPE & REEL OF 3K UNITS

Pinout




Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	25	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current	4	A
PDISS	Power Dissipation (@ Tc = 70)	19.5	W
Tj	Max. Operating Junction Temperature	150
TSTG	Storage Temperature	-65 to +150

Description

The PD54003L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003L boasts the excellent gain, linearity and  reliability  of  STH1LV  latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT(TM).

PD54003L's superior linearity performance makes it an ideal solution for portable radio.