PD57018S

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Output Power : 18 W
Continuous Drain Current : 2.5 A
Package / Case : PowerSO-10RF (Straight Lead)
Gain : 16.5 dB at 945 MHz


Features:

·  EXCELLENT THERMAL STABILITY
·  COMMON SOURCE CONFIGURATION
·  POUT = 18Wwith14dB gain@960 MHz /28V
·  NEW RF PLASTIC PACKAGE

Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	65	V
VGS	Gate-Source Voltage	±20	V
ID	Drain Current	2.5	A
PDISS	Power Dissipation (@ Tc = 70)	31.7	W
Tj	Max. Operating Junction Temperature	165
TSTG	Storage Temperature	-65 to 175

Description

The PD57018S isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 28V in common source mode at frequencies of up to 1GHz. PD57018S boasts the excellent gain, linearity and reliability of ST's latest LDMOS tech-nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57018S's su-perior linearity performance makes it an ideal so-lution for base station applications.

The PowerSO-10 plastic package of PD57018S, designed toof-fer high reliability, is the first ST JEDECapproved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease ofassembly.