Features: • Planar Structure• Dielectric Passivation• High Shunt Resistance• High ResponsivityApplication• High Sensitivity Instrumentation• Laser Back Facet MonitoringSpecifications PARAMETER MIN. MAX. UNIT Forward Current - 50 mA ...
PD500: Features: • Planar Structure• Dielectric Passivation• High Shunt Resistance• High ResponsivityApplication• High Sensitivity Instrumentation• Laser Back Facet Moni...
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PARAMETER |
MIN. |
MAX. |
UNIT |
Forward Current |
- |
50 |
mA |
Reverse Current |
- |
5 |
mA |
Reverse Voltage |
- |
15 |
V |
Optical input power |
- |
5 |
mW |
Operating Case Temperature |
-40 |
+85 |
ºC |
Storage Temperature |
-40 |
+85 |
ºC |
Soldering temperature (10 seconds) |
- |
+250 |
ºC |
The PD500 is an InGaAs photodiode with a photosensitive region 500m in diameter. It is intended for use in high sensitivity instrumentation, laser back-facet monitoring and low bit rate communication systems.
Planar semiconductor design and dielectric passivation provide superior noise performance.The PD500 can be assembled on a ceramic submount or in an hermetic TO46 can. Custom packages are an option.