PD57070-E

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Output Power : 70 W
Continuous Drain Current : 7 A
Package / Case : PowerSO-10RF (Formed Lead)
Gain : 14.7 dB at 945 MHz


Features:

· Excellent thermal stability
· Common source configuration
· P_OUT = 70W with 14.7dB gain @ 945MHz / 28V
· New RF plastic package


Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	65	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current	7	A
PDISS	Power Dissipation (@ Tc = 70)	95	W
TJ	Max. Operating Junction Temperature	165
TSTG	Storage Temperature	-65 to +150

Description

The PD57070-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57070-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO- 10RF. PD57070-E's superior linearity performance makes it an ideal solution for base station applications.

The PowerSO-10 plastic package of PD57070-E, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

Parameters:

Technical/Catalog Information	PD57070-E
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	65V
Current Rating	7A
Package / Case	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PD57070 E PD57070E 497 6721 5 ND 49767215ND 497-6721-5