PD4M440H

Features: · Dual MOS FETs Cascaded Circuit · Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel· 300KHz High Speed Switching Possible Application· Power Supply for the Communications andthe Induction Heating Specifications Ratings Symbol ...

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PD4M440H Picture
SeekIC No. : 004457199 Detail

PD4M440H: Features: · Dual MOS FETs Cascaded Circuit · Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel· 300KHz High Speed Switching Possible Application· Power S...

floor Price/Ceiling Price

Part Number:
PD4M440H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/25

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Product Details

Description



Features:

·  Dual MOS FETs Cascaded Circuit
·  Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel  
·  300KHz High Speed Switching Possible 




Application

·  Power Supply for the Communications and  the Induction Heating




Specifications

Ratings
Symbol
PD4M441H
PD4M440H
Unit
Drain-Source Voltage (VGS=0V)
VDSS
450
500
V
Gate - Source Voltage
VGSS
+/ - 20
V
Continuous Drain Current
Duty=50%
ID
30 (Tc=25)
A
D.C.
21 (Tc=25)
Pulsed Drain Current
IDM
60 (Tc=25)
A
Total Power Dissipation
PD
230 (Tc=25)
W
Operating Junction Temperature Range
Tjw
-40 to +150
Storage Temperature Range
Tstg
-40 to +125
Isolation Voltage Terminals to Base AC, 1 min.)
VISO
2000
V
Mounting Torque Module Base to Heatsink
FTOR
3.0
N*m
Bus Bar to Main Terminals
2.0



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