Features: · Dual MOS FETs Cascaded Circuit · Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel· 300KHz High Speed Switching Possible Application· Power Supply for the Communications andthe Induction Heating Specifications Ratings Symbol ...
PD4M441H: Features: · Dual MOS FETs Cascaded Circuit · Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel· 300KHz High Speed Switching Possible Application· Power S...
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· Dual MOS FETs Cascaded Circuit
· Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel
· 300KHz High Speed Switching Possible
· Power Supply for the Communications and the Induction Heating
Ratings |
Symbol |
PD4M441H |
PD4M440H |
Unit | |
Drain-Source Voltage (VGS=0V) |
VDSS |
450 |
500 |
V | |
Gate - Source Voltage |
VGSS |
+/ - 20 |
V | ||
Continuous Drain Current |
Duty=50% |
ID |
30 (Tc=25) |
A | |
D.C. |
21 (Tc=25) | ||||
Pulsed Drain Current |
IDM |
60 (Tc=25) |
A | ||
Total Power Dissipation |
PD |
230 (Tc=25) |
W | ||
Operating Junction Temperature Range |
Tjw |
-40 to +150 |
|||
Storage Temperature Range |
Tstg |
-40 to +125 |
| ||
Isolation Voltage Terminals to Base AC, 1 min.) |
VISO |
2000 |
V | ||
Mounting Torque | Module Base to Heatsink |
FTOR |
3.0 |
N*m | |
Bus Bar to Main Terminals |
2.0 |