PD55008L

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Frequency : 1 GHz
Gate-Source Breakdown Voltage : 15 V
Drain-Source Breakdown Voltage : 40 V
Package / Case : PowerFLAT (5x5)
Output Power : 8 W
Continuous Drain Current : 5 A
Gain : 17 dB at 500 MHz


Features:

·  EXCELLENT THERMAL STABILITY
·  COMMON SOURCE CONFIGURATION
·  POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V
·  INTEGRATED ESD PROTECTION
·  NEW LEADLESS PLASTIC PACKAGE
·  SUPPLIED IN TAPE & REEL OF 3K UNITS

Pinout




Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	40	V
VGS	Gate-Source Voltage	-0.5 to 15	V
ID	Drain Current	5	A
PDISS	Power Dissipation (@ Tc = 70)	19.5	W
Tj	Max. Operating Junction Temperature	150
TSTG	Storage Temperature	-65 to +150

Description

The PD55008L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz.

PD55008L boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS  technology mounted in the innovative leadless  SMD plastic package, PowerFLAT(TM). PD55008L's  superior linearity performance makes it an ideal solution for car mobile radio.