PD54008S

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Drain-Source Breakdown Voltage : 25 V
Output Power : 8 W
Package / Case : PowerSO-10RF (Straight Lead)
Continuous Drain Current : 5 A
Gain : 11.5 dB at 500 MHz


Features:

·  EXCELLENT THERMAL STABILITY
·  COMMON SOURCE CONFIGURATION
·  POUT = 8W with 10 dB gain @ 500 MHz/ 7.5V
·  NEW RF PLASTIC PACKAGE

Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	25	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current	5	A
PDISS	Power Dissipation (@ Tc = 70)	73	W
Tj	Max. Operating Junction Temperature	165
TSTG	Storage Temperature	-65 to +150

Description

The PD54008S isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 7V in common source mode at frequencies of up to 1GHz. PD54008S boasts the excellent gain, linearity and reliability of ST's latest LDMOS tech-nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD54008S's su-perior linearity performance makes it an ideal so-lution for portable radio.

The PowerSO-10 plastic package, designed toof-fer high reliability, is the first ST JEDECapproved, high power SMD package. PD54008S has been specially optimized for RF needs and offers excellent RF performances and ease ofassembly.