PD55003S

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Drain-Source Breakdown Voltage : 40 V
Output Power : 3 W
Continuous Drain Current : 2.5 A
Package / Case : PowerSO-10RF (Straight Lead)
Gain : 17 dB at 500 MHz


Features:

·  EXCELLENT THERMAL STABILITY
·  COMMON SOURCE CONFIGURATION
·  POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V
·  NEW RF PLASTIC PACKAGE

Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	40	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current	2.5	A
PDISS	Power Dissipation (@ Tc = 70)	31.7	W
Tj	Max. Operating Junction Temperature	165
TSTG	Storage Temperature	-65 to +150

Description

The PD55003S is a common source N-Channel, en-hancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003S boasts the excellent gain,linearity and reliability of ST's latest LDMOS tech-nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55003S's su-perior linearity performance makes it an ideal so-lution for car mobile radio.

The PowerSO-10 plastic package, designed to of-fer high reliability, is the first ST JEDEC approved, high power SMD package. PD55003S has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.