PD55025

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Gain : 14.5 dB at 500 MHz
Output Power : 25 W
Drain-Source Breakdown Voltage : 40 V
Continuous Drain Current : 7 A
Package / Case : PowerSO-10RF (Formed Lead)


Features:

·  EXCELLENT THERMAL STABILITY
·  COMMON SOURCE CONFIGURATION
·  POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V
·  NEW RF PLASTIC PACKAGE

Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	40	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current	7	A
PDISS	Power Dissipation (@ Tc = 70)	79	W
Tj	Max. Operating Junction Temperature	165
TSTG	Storage Temperature	-65 to +150

Description

The PD55025 is a  common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55025 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55025's superior linearity performance makes it an ideal solution for car mobile radio.

The PowerSO-10 plastic  package of PD55025 , designed  to offer  high  reliability,  is  the  first  ST  JEDEC approved, high power SMD package. It has been specially optimized for  RF  needs  and  offers excellent RF performances and ease of assembly.