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PD500-1xx

Features: • Planar Structure• Dielectric Passivation• High Shunt Resistance• High ResponsivityApplication• High Sensitivity Instrumentation• Laser Back Facet MonitoringSpecifications PARAMETER MIN. MAX. UNIT Forward Current - 50 mA ...

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SeekIC No. : 004457206 Detail

PD500-1xx: Features: • Planar Structure• Dielectric Passivation• High Shunt Resistance• High ResponsivityApplication• High Sensitivity Instrumentation• Laser Back Facet Moni...

PD500-1xx Data Sheet

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Part Number:
PD500-1xx
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

• Planar Structure
• Dielectric Passivation
• High Shunt Resistance
• High Responsivity


Application

• High Sensitivity Instrumentation
• Laser Back Facet Monitoring


Specifications

PARAMETER
MIN.
MAX.
UNIT
Forward Current
-
50
mA
Reverse Current
-
5
mA
Reverse Voltage
-
15
V
Optical input power
-
5
mW
Operating Case Temperature
-40
+85
ºC
Storage Temperature
-40
+85
ºC
Soldering temperature (10 seconds)
-
+250
ºC
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.


Description

The PD500-1xx is an InGaAs photodiode with a photosensitive region 500m in diameter. PD500-1xx is intended for use in high sensitivity instrumentation, laser back-facet monitoring and low bit rate communication systems.

Planar semiconductor design and dielectric passivation provide superior noise performance.The PD500-1xx can be assembled on a ceramic submount or in an hermetic TO46 can. Custom packages are an option.




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