PD54008L

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Frequency : 1 GHz
Gate-Source Breakdown Voltage : 15 V
Drain-Source Breakdown Voltage : 25 V
Package / Case : PowerFLAT (5x5)
Output Power : 8 W
Continuous Drain Current : 5 A
Gain : 15 dB at 500 MHz


Features:

· EXCELLENT THERMAL STABILITY
· COMMON SOURCE CONFIGURATION
· BROADBAND PERFORMANCES POUT = 8 W WITH 15 dB GAIN @ 500 MHz
· NEW LEADLESS PLASTIC PACKAGE
· ESD PROTECTION
· SUPPLIED IN TAPE & REEL OF 3K UNITS

Pinout




Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	25	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current	5	A
PDISS	Power Dissipation (@ Tc = 70)	26.7	W
Tj	Max. Operating Junction Temperature	150
TSTG	Storage Temperature	-65 to +150

Description

The PD54008L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54008L boasts the  excellent  gain, linearity and reliability  of  STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT(TM).

PD54008L's superior linearity performance makes it an ideal solution for portable radio.