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Position: Home > SiteMap > Index M > Page 926

Index M : MGFC41V7177,MGFC41V6472,MGB81W,

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  • MGFC41V7177

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    
    The MGFC41V7177 is an internally impedence matched GaAs power FET especially designed for use in 7.1 - 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high raliability.

  • MGFC41V6472

    Vendor:Other    Category:Other    
    The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFC41V5964

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    
    The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high raliability.

  • MGFC41V3642

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFC40V6472

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFC40V5964

    Vendor:Other    Category:Other    
    The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFC40V5258

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFC40V4450

    Vendor:Other    Category:Other    
    The MGFC40V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFC40V3742

    Vendor:Other    Category:Other    
    The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFC39V7785A

    Vendor:Other    Category:Other    
    The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.

  • MGFC39V7177A

    Vendor:Other    Category:Other    
    The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFC39V6472A

    Vendor:Other    Category:Other    
    The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.

  • MGFC39V5867

    Vendor:Other    Category:Other    
    The MGFC39V5867 is device is an internally impendance-matched GaAs power FET especially designed for use in 5.8 to 6.75GHz band amplifiers.The hermetically sealed metal-ceramic package gurantees high reliability. The MG...

  • MGFC39V4450A

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFC39V3436

    Vendor:Other    Category:Other    
    The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFC38V6472

    Vendor:Other    Category:Other    
    The MGFC38V6472 has the following features including Maximum switching capability up to 50A;Lamp load up to 5000W;Capacitor load up to 200uF (Min. inrush current at 500A/10s);Creepage distance: 8mm;Dielectric strength: m...

  • MGFC38V5964

    Vendor:Other    Category:Other    
    The MGFC38V6472 has the following features including Maximum switching capability up to 50A;Lamp load up to 5000W;Capacitor load up to 200uF (Min. inrush current at 500A/10s);Creepage distance: 8mm;Dielectric strength: m...

  • MGFC38V5867

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGFC36V7177A

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFC36V6472A

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFC36V5964A

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFC36V5867

    Vendor:Other    Category:Other    
    The MGFC36V5867 is device is an internally impendance-matched GaAs power FET especially designed for use in 5.8 to 6.75GHz band amplifiers.The hermetically sealed metal-ceramic package gurantees high reliability. The MG...

  • MGFC36V5258

    Mfg:MITSUBISHI    Pack:N/A    D/C:N/A    Vendor:Other    Category:Other    

  • MGFC36V4450A

    Vendor:Other    Category:Other    
    The MGFC36V4450A is an internally impedance-matchedGaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFC36V3742A

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFC36V3436

    Vendor:Other    Category:Other    
    The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGF7176C

    Mfg:MITSUBISHI    Pack:QFN    Vendor:Other    Category:Other    
    The MGF7176C is a monolithic microwave integrated circuit for use in CDMA base handheld phone.

  • MGF7175C

    Vendor:Other    Category:Other    
    The MGF7175C is a monolithic microwave integrated circuit for use in CDMA base handheld phone.

  • MGF7170AC

    Mfg:MITSUBISHI    Pack:SMD    Vendor:Other    Category:Other    
    The MGF7170AC is a monolithic microwave integrated circuit for use in CDMA base handheld phone.

  • MGF7169C

    Mfg:MIT    Pack:N/A    D/C:06+    Vendor:Other    Category:Other    
    The MGF7169C is a monolithic microwave integrated circuit for use in CDMA base handheld phone.

  • MGF7168C

    Mfg:MITSUBISHI    Pack:LLCC10    Vendor:Other    Category:Other    
    MGF7168C is a monolithic microwave integrated circuit for use in UHF-band power amplifier.

  • MGF7124A

    Vendor:Other    Category:Other    
    MGF7124A is a monolithic microwave integrated circuit for use in 1.9GHz band power amplifiers.

  • MGF4961B

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGF4953B

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGF4953A

    Mfg:MIT    Pack:SMD    D/C:03+    Vendor:Other    Category:Other    

  • MGF4952A

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGF4941AL

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGF4935AM

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGF4934CM

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGF4934BM

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGF4934AM

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGF4931AM

    Vendor:Other    Category:Other    
    The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.The 4pin flat lead package is small-thin size, and offers high cost performance.

  • MGF491xG

    Vendor:Other    Category:Other    
    The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers.The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a config...

  • MGF4851A

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGF4714CP

    Mfg:MIT    Pack:98+    D/C:150    Vendor:Other    Category:Other    
    The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circui...

  • MGF431xG

    Vendor:Other    Category:Other    
    The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers.The hermetically sealed metal-ceramic package of MGF431xG assures minimum parasitic losses, and ha...

  • MGF2445A

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGF2430A

    Mfg:MITSUBISHI    Pack:N/A    D/C:N/A    Vendor:Other    Category:Other    

  • MGF2415A

    Mfg:MIT    D/C:07+    Vendor:Other    Category:Other    

  • MGF2407A

    Mfg:MIT    D/C:07+    Vendor:Other    Category:Other    

  • MGF1954A

    Vendor:Other    Category:Other    
    The MGF1954A is designed for use in S to Ku band power amplifiers.The lead-less ceramic package assures minimum parasitic losses.

  • MGF1953A

    Vendor:Other    Category:Other    
    The MGF1953A is designed for use in S to Ku band power amplifiers.The lead-less ceramic package assures minimum parasitic losses.

  • MGF1952A

    Vendor:Other    Category:Other    
    The MGF1952A is designed for use in S to Ku band power amplifiers.The lead-less ceramic package assures minimum parasitic losses.

  • MGF1951A

    Vendor:Other    Category:Other    
    The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics.

  • MGF1907A

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGF1801B

    Vendor:Other    Category:Other    
    The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package of MGF1801B assures minimum parasitic losse...

  • MGF1601B

    Mfg:MIT    D/C:07+    Vendor:Other    Category:Other    
    The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package of MGF1601B assures minimum parasitic losse...

  • MGF1451A

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGF1402B

    Vendor:Other    Category:Other    
    The MGF1402B is designed as one kind of low noise GaAs FET with an N-channel Schottky gate. This device is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package of MGF14...

  • MGF1302

    Mfg:MITSUBISHI    Pack:N/A    D/C:N/A    Vendor:Other    Category:Other    

  • MGF1001P

    Vendor:Other    Category:Other    
    The MGF1001P is a MMIC designed for use in dual frequency oscilltor. features of MGF1001P are: (1)phase noise:-9 0.0dBc/Hz; (2)oscillation output power: 5.00dBm(typ). The absolute maximum ratings and electrical charact...

  • MGF0953P

    Vendor:Other    Category:Other    
    The MGF0953P GaAs FET with an N-channel schottky gate,is designed for use L & S band amplifiers. The MGF0953P has four features.The first one is high output power P1dB =28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm.The second ...

  • MGF0952P

    Vendor:Other    Category:Other    
    The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.

  • MGF0951P

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGF0921A

    Vendor:Other    Category:Other    
    The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

  • MGF0920A

    Vendor:Other    Category:Other    
    The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

  • MGF0919A

    Vendor:Other    Category:Other    
    The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

  • MGF0918A

    Vendor:Other    Category:Other    
    The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

  • MGF0917A

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    
    The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

  • MGF0916A

    Vendor:Other    Category:Other    
    The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

  • MGF0915A

    Vendor:Other    Category:Other    
    The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

  • MGF0914A

    Vendor:Other    Category:Other    
    The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers.

  • MGF0913A

    Vendor:Other    Category:Other    
    The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

  • MGF0912A

    Vendor:Other    Category:Other    
    The MGF0912A GaAs FET with an N-channel schottky gate,is designed for use L & S band amplifiers. The MGF0912A has four features.The first one is high output power P1dB =41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm.The second o...

  • MGF0911A

    Vendor:Other    Category:Other    
    The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

  • MGF0910A

    Vendor:Other    Category:Other    
    The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

  • MGF0909A

    Vendor:Other    Category:Other    
    The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

  • MGF0907B

    Mfg:MIT    D/C:07+    Vendor:Other    Category:Other    

  • MGF0906B

    Mfg:MIT    D/C:07+    Vendor:Other    Category:Other    

  • MGF0904A

    Mfg:MIT    D/C:07+    Vendor:Other    Category:Other    

  • MGE18T

    Vendor:Other    Category:Other    

  • MGDM-10

    Vendor:Other    Category:Other    
    The MGDM-10 series is a full family of high performance DC/DC low profile power modules designed for aerospace, military and high-end industrial applications.These modules use a high frequency fixed switching technic at...

  • MGDI-10

    Vendor:Other    Category:Other    
    The MGDI-10 series is a full family of DC/DC power modules designed for use in distributed power architecture and are particularly suitable for mobile or ground fixed applications in transportation, industry and télécomm...

  • MGCT04

    Vendor:Other    Category:Other    
    The MGCT04 circuit is designed for use in dual band, dual mode cellular 900MHz/PCS1900MHzmobile phones. MGCT04 can be used for both TDMA/AMPS or CDMA/AMPS systems. The MGCT04 is compatible with baseband and mixed signal ...

  • MGCT02

    Mfg:MITEL    Pack:SSOP28    D/C:01+    Vendor:Other    Category:Other    
    The MGCT02 circuit is designed for use in dual band, dual mode cellular 900MHz/PCS1900MHz mobile phones. It can be used for TDMA/AMPS. The MGCT02 is compatible with baseband and mixed signal interface circuits from Zarli...

  • MGCR01

    Mfg:MITEL    Pack:SSOP    Vendor:Other    Category:Other    
    The MGCR01 is designed for use in dual mode mobile phones (TDMA/AMPS and CDMA/AMPS). The circuit provides IF amplification with gain controland differential I and Q baseband outputs. The MGCR01 interfaces directly with M...

  • MGCM02

    Vendor:Other    Category:Other    
    The MGCM02 provides the complete IF to baseband I and Q including channel filtering for IS136/AMPS.The receive input of MGCM02 is at an IF frequency up to 200MHz. This is downconverted to an internal IF of 60kHz and filt...

  • MGCM01

    Mfg:ZARLINK    Pack:TQFP    D/C:08+    Vendor:Other    Category:Other    
    The inputs for the receive path are I and Q signals at an IF of 60kHz. The I and Q signals are filtered by a 60kHz switched capacitor bandpass filter and are then demodulated to give baseband I and Q signals. The MGCM01 ...

  • MGC32W

    Vendor:Other    Category:Other    

  • MGC32TA

    Vendor:Other    Category:Other    

  • MGC32D

    Vendor:Other    Category:Other    

  • MGC32C

    Vendor:Other    Category:Other    

  • MGC15N40CL

    Vendor:Other    Category:Other    

  • MGC15N35CL

    Vendor:Other    Category:Other    

  • MGB90TA-3

    Vendor:Other    Category:Other    

  • MGB90TA-2

    Vendor:Other    Category:Other    

  • MGB90TA-1

    Vendor:Other    Category:Other    

  • MGB90TA

    Vendor:Other    Category:Other    

  • MGB83D

    Vendor:Other    Category:Other    

  • MGB81W

    Vendor:Other    Category:Other    

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