MGF0914A

Features: · High output power Po=35.5dBm(TYP.) @f=1.9GHz,Pin=26dBm· High power gain Gp=11dB(TYP.) @f=1.9GHz· High power added efficiency hadd=48%(TYP.) @f=1.9GHz,Pin=26dBm· Hermetic PackageApplication· For UHF Band power amplifiersSpecifications Symbol Parameter Ratings Unit ...

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SeekIC No. : 004419810 Detail

MGF0914A: Features: · High output power Po=35.5dBm(TYP.) @f=1.9GHz,Pin=26dBm· High power gain Gp=11dB(TYP.) @f=1.9GHz· High power added efficiency hadd=48%(TYP.) @f=1.9GHz,Pin=26dBm· Hermetic PackageApplicati...

floor Price/Ceiling Price

Part Number:
MGF0914A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· High output power
    Po=35.5dBm(TYP.) @f=1.9GHz,Pin=26dBm
· High power gain
    Gp=11dB(TYP.) @f=1.9GHz
· High power added efficiency
    hadd=48%(TYP.) @f=1.9GHz,Pin=26dBm
· Hermetic Package



Application

· For UHF Band power amplifiers


Specifications

Symbol
Parameter
Ratings
Unit
VGSO
Gate to sourcebreakdown voltage
-15
V
VGDO
Gate to drain breakdown voltage
-15
V
ID
Drain current
3200
mA
IGR
Reverse gate current
-10
mA
IGF
Forward gate current
21.5
mA
PT
Total power dissipation
12
W
Tch
Cannel temperature
175
°C
Tstg
Storage temperature
-65 to +175
°C



Description

The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers.


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