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MGF0915A

Features: • High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm• High power gain Gp=14.5 dB(TYP.) @f=1.9GHz• High power added efficiency add=50 %(TYP.) @f=1.9GHz,Pin=23dBm• Hermetic PackageApplication• For UHF Band power amplifiersSpecifications Parameter ...

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MGF0915A: Features: • High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm• High power gain Gp=14.5 dB(TYP.) @f=1.9GHz• High power added efficiency add=50 %(TYP.) @f=1.9GHz,Pin=23dBm̶...

MGF0915A Data Sheet

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Part Number:
MGF0915A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm
• High power gain Gp=14.5 dB(TYP.) @f=1.9GHz
• High power added efficiency add=50 %(TYP.) @f=1.9GHz,Pin=23dBm
• Hermetic Package




Application

• For UHF Band power amplifiers




Specifications

Parameter
Symbol
Ratings
Unit
Gate to sourcebreakdown voltage VGSO
-15
V
Gate to drain breakdown voltage VGDO
-15
V
Drain current ID
3000
A
Reverse gate current IGR
-10
A
Forward gate current IGF
21
W
Total power dissipation PT
18.7
°C
Total power dissipation Tch
175
°C
Storage temperature Tstg
-65 to +175
V





Description

The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.




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