Features: • Class A operation• High output power P1dB=38dBm(TYP) @2.3GHz• High power gain GLP=11dB(TYP) @2.3GHz• High power added efficiency hadd=45%(TYP) @2.3GHz,P1dB• Hermetically sealed metal-ceramic package with ceramic lidApplication·UHF band power amplifiersSpec...
MGF0910A: Features: • Class A operation• High output power P1dB=38dBm(TYP) @2.3GHz• High power gain GLP=11dB(TYP) @2.3GHz• High power added efficiency hadd=45%(TYP) @2.3GHz,P1dB•...
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Symbol | Parameter | Ratings | Unit |
VGSO | Gate to sourcebreakdown voltage | -15 | V |
VGDO | Gate to drain breakdown voltage | -15 | V |
ID | Drain current | 5 | mA |
IGR | Reverse gate current | 15 | mA |
IGF | Forward gate current | 31.5 | mA |
PT | Total power dissipation | 27.3 | W |
Tch | Cannel temperature | 175 | °C |
Tstg | Storage temperature | -65 to +175 | °C |