Features: · High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm· High power gain Gp=19dB(TYP.) @f=1.9GHz· High power added efficiency hadd=37%(TYP.) @f=1.9GHz,Pin=12dBm· Hermetic PackageApplication· For UHF Band power amplifiersSpecifications Symbol Parameter Ratings Unit VGSO Gate to...
MGF0919A: Features: · High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm· High power gain Gp=19dB(TYP.) @f=1.9GHz· High power added efficiency hadd=37%(TYP.) @f=1.9GHz,Pin=12dBm· Hermetic PackageApplication...
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Symbol | Parameter | Ratings | Unit |
VGSO | Gate to sourcebreakdown voltage | -15 | V |
VGDO | Gate to drain breakdown voltage | -15 | V |
ID | Drain current | 800 | mA |
IGR | Reverse gate current | -2.4 | mA |
IGF | Forward gate current | 10 | mA |
PT | Total power dissipation | 6 | W |
Tch | Cannel temperature | 175 | °C |
Tstg | Storage temperature | -65 to +175 | °C |
The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.