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MGFC40V5964

Features: ·Class A operation·Internally matched to 50(ohm) system·High output power P1dB = 10W (TYP.) @ f=5.9~6.4GHz·High power gain GLP = 10 dB (TYP.) @ f=5.9~6.4GHz·High power added efficiency P.A.E. = 30 % (TYP.) @ f=5.9~6.4GHz·Low distortion [ item -51 ] IM3= -49 dBc(TYP.) @Po=29(dBm) S.C.L.Ap...

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MGFC40V5964: Features: ·Class A operation·Internally matched to 50(ohm) system·High output power P1dB = 10W (TYP.) @ f=5.9~6.4GHz·High power gain GLP = 10 dB (TYP.) @ f=5.9~6.4GHz·High power added efficiency P.A...

MGFC40V5964 Data Sheet

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Part Number:
MGFC40V5964
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Class A operation
·Internally matched to 50(ohm) system
·High output power P1dB = 10W (TYP.) @ f=5.9~6.4GHz
·High power gain GLP = 10 dB (TYP.) @ f=5.9~6.4GHz
·High power added efficiency P.A.E. = 30 % (TYP.) @ f=5.9~6.4GHz
·Low distortion [ item -51 ] IM3= -49 dBc(TYP.) @Po=29(dBm) S.C.L.




Application

·item 01 : 5.9~6.4 GHz band power amplifier
·item 51 : 5.9~6.4 GHz band digital radio communication




Specifications

Symbol
Parameter
Ratings
Unit
VGDO
VGSO
ID
IGR
IGF
PT
Tch
Tstg
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation *1
Channel temperature
Storage temperature
-15
-15
7.5
-20
42
42.8
175
-65 / +175
V
V
A
mA
mA
W
deg.C
deg.C
*1 : Tc=25 deg.C




Description

The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.






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