MGFC36V4450A Selling Leads, Price trend, MGFC36V4450A DataSheet download, circuit diagram from SeekIC.com

Features: ·Class A operation·Internally matched to 50(ohm) system·High output power·P1dB = 4W (TYP.) @ f=4.4~5.0GHz·High power gain·GLP = 12 dB (TYP.) @ f=4.4~5.0GHz·High power added efficiency·P.A.E. = 32 % (TYP.) @ f=4.4~5.0GHz·Low distortion [ item -51 ]·IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.Appli...

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SeekIC No. : 004419858 Detail

MGFC36V4450A: Features: ·Class A operation·Internally matched to 50(ohm) system·High output power·P1dB = 4W (TYP.) @ f=4.4~5.0GHz·High power gain·GLP = 12 dB (TYP.) @ f=4.4~5.0GHz·High power added efficiency·P.A....

MGFC36V4450A Data Sheet

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Part Number:: MGFC36V4450A
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/11/26

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Product Details

Description

Features:

·Class A operation
·Internally matched to 50(ohm) system
·High output power
·P1dB = 4W (TYP.) @ f=4.4~5.0GHz
·High power gain
·GLP = 12 dB (TYP.) @ f=4.4~5.0GHz
·High power added efficiency
·P.A.E. = 32 % (TYP.) @ f=4.4~5.0GHz
·Low distortion [ item -51 ]
·IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.

Application

·item 01 : 4.4~5.0 GHz band power amplifier
·item 51 : 4.4~5.0 GHz band digital radio communication

Specifications

Parameter	Symbol	Ratings	Unit
Gate to drain voltage	V_GDO	-15	V
Gate to source voltage	V_GSO	-15	V
Drain current	I_D	3.75	A
Reverse gate current	I_GR	-10	mA
Forward gate current	I_GF	21	mA
Total power dissipation	P_T	25	W
Channel temperature	T_ch	175	deg.C
Storage temperature	T_stg	65 /+175	deg.C

Description

The MGFC36V4450A is an internally impedance-matchedGaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

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