MGF0920A

Features: · High output powerPo=32dBm(TYP.) @f=1.9GHz,Pin=15dBm· High power gainGp=18dB(TYP.) @f=1.9GHz· High power added efficiencyhadd=45%(TYP.) @f=1.9GHz,Pin=15dBm· Hermetic PackageApplication· For UHF Band power amplifiersSpecifications Symbol Parameter Ratings Unit VGSO ...

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SeekIC No. : 004419816 Detail

MGF0920A: Features: · High output powerPo=32dBm(TYP.) @f=1.9GHz,Pin=15dBm· High power gainGp=18dB(TYP.) @f=1.9GHz· High power added efficiencyhadd=45%(TYP.) @f=1.9GHz,Pin=15dBm· Hermetic PackageApplication· F...

floor Price/Ceiling Price

Part Number:
MGF0920A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Features:

· High output power
Po=32dBm(TYP.) @f=1.9GHz,Pin=15dBm
· High power gain
Gp=18dB(TYP.) @f=1.9GHz
· High power added efficiency
hadd=45%(TYP.) @f=1.9GHz,Pin=15dBm
· Hermetic Package





Application

· For UHF Band power amplifiers




Specifications

Symbol
Parameter
Ratings
Unit
VGSO
Gate to sourcebreakdown voltage
-15
V
VGDO
Gate to drain breakdown voltage
-15
V
ID
Drain current
1500
mA
IGR
Reverse gate current
-3.6
mA
IGF
Forward gate current
15
mA
PT
Total power dissipation
8.3
W
Tch
Cannel temperature
175
°C
Tstg
Storage temperature
-65 to +175
°C





Description

The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.




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