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MGFC41V6472

Features: ·Class A operation·Internally matched to 50(ohm) system·High output power P1dB = 12W (TYP.) @ f=6.4~7.2GHz·High power gain GLP = 9 dB (TYP.) @ f=6.4~7.2GHz·High power added efficiency P.A.E. = 32 % (TYP.) @ f=6.4~7.2GHz·Low distortion [ item -51 ] IM3= -45 dBc(TYP.) @Po=30dBm S.C.L.·Ther...

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MGFC41V6472: Features: ·Class A operation·Internally matched to 50(ohm) system·High output power P1dB = 12W (TYP.) @ f=6.4~7.2GHz·High power gain GLP = 9 dB (TYP.) @ f=6.4~7.2GHz·High power added efficiency P.A....

MGFC41V6472 Data Sheet

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Part Number:
MGFC41V6472
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Class A operation
·Internally matched to 50(ohm) system
·High output power P1dB = 12W (TYP.) @ f=6.4~7.2GHz
·High power gain GLP = 9 dB (TYP.) @ f=6.4~7.2GHz
·High power added efficiency P.A.E. = 32 % (TYP.) @ f=6.4~7.2GHz
·Low distortion [ item -51 ] IM3= -45 dBc(TYP.) @Po=30dBm S.C.L.
·Thermal Resistance Rth(ch-c)=- deg.C/W(TYP.)




Application

·item 01 : 6.4~7.2 GHz band power amplifier
·item 51 : 6.4~7.2 GHz band digital radio communication




Specifications

Symbol
Parameter
Ratings
Unit
VGDO
VGSO
ID
IGR
IGF
PT
Tch
Tstg		 Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation *1
Channel temperature
Storage temperature
-15
-15
12
-30
63
53.6
175
-65 to +175
V
V
A
mA
mA
W
deg.C
deg.C
*1 : Tc=25 deg.C




Description

The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.






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