Features: · High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm· High power gain Gp=21dB(TYP.) @f=1.9GHz· High power added efficiency hadd=38%(TYP.) @f=1.9GHz,Pin=4dBm· Hermetic PackageApplication· For UHF Band power amplifiersSpecifications Symbol Parameter Ratings Unit VGSO Gate to s...
MGF0917A: Features: · High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm· High power gain Gp=21dB(TYP.) @f=1.9GHz· High power added efficiency hadd=38%(TYP.) @f=1.9GHz,Pin=4dBm· Hermetic PackageApplication· ...
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Symbol | Parameter | Ratings | Unit |
VGSO | Gate to sourcebreakdown voltage | -15 | V |
VGDO | Gate to drain breakdown voltage | -15 | V |
ID | Drain current | 200 | mA |
IGR | Reverse gate current | -0.6 | mA |
IGF | Forward gate current | 2.5 | mA |
PT | Total power dissipation | 2 | W |
Tch | Cannel temperature | 175 | °C |
Tstg | Storage temperature | -65 to +175 | °C |