Features: • Low noise figure @f=12GHz MGF4916G:NFmin.=0.80dB(MAX.) MGF4919G:NFmin.=0.50dB(MAX.)• High associated gain @f=12GHz Gs=12.0dB(MIN.)Application·L to Ku band low noise amplifiers.Specifications Parameter Symbol Ratings Unit Gate to drain voltage ...
MGF491xG: Features: • Low noise figure @f=12GHz MGF4916G:NFmin.=0.80dB(MAX.) MGF4919G:NFmin.=0.50dB(MAX.)• High associated gain @f=12GHz Gs=12.0dB(MIN.)Application·L to Ku band low noise amplifier...
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Parameter |
Symbol |
Ratings |
Unit |
Gate to drain voltage |
VGDO |
-4 |
V |
Gate to source voltage |
VGSO |
-4 |
V |
Drain current |
ID |
60 |
mA |
Total power dissipation *1 |
PT |
50 |
mW |
Channel temperature |
Tch |
175 |
°C |
Storage temperature |
Tstg |
65 /+175 |
°C |
The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers.
The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits.The MGF491*G series is mounted in the super 12 tape.