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MGF4714CP

Features: • Low noise figure NFmin.=1.00dB(MAX.) @f=12GHz• High associated gain Gs=11.0dB(MIN.) @f=12GHzApplication·L to Ku band low noise amplifiers.Specifications Parameter Symbol Ratings Unit Gate to drain voltage VGDO -4 V Gate to sou...

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MGF4714CP: Features: • Low noise figure NFmin.=1.00dB(MAX.) @f=12GHz• High associated gain Gs=11.0dB(MIN.) @f=12GHzApplication·L to Ku band low noise amplifiers.Specifications Parameter ...

MGF4714CP Data Sheet

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Part Number:
MGF4714CP
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low noise figure NFmin.=1.00dB(MAX.) @f=12GHz
• High associated gain Gs=11.0dB(MIN.) @f=12GHz


Application

·L to Ku band low noise amplifiers.


Specifications

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-4
V
Gate to source voltage
VGSO
-4
V
Drain current
ID
60
mA
Total power dissipation *1
PT
50
mW
Channel temperature
Tch
125
°C
Storage temperature
Tstg
65 /+125
°C



Description

The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circuits.

The MGF4714CP is mounted in Super 12 tape.




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