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MGF431xG

Features: ·Low noise figure @ f=12GHz·MGF4316G : NF min.=0.80dB (MAX.)·MGF4319G : NF min.=0.50dB (MAX.)·High associated gain·Gs=12.0 dB (MIN.) @ f=12GHzApplication·L to K band low noise amplifiers.Specifications Parameter Symbol Ratings Unit Gate to drain voltage V...

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SeekIC No. : 004419836 Detail

MGF431xG: Features: ·Low noise figure @ f=12GHz·MGF4316G : NF min.=0.80dB (MAX.)·MGF4319G : NF min.=0.50dB (MAX.)·High associated gain·Gs=12.0 dB (MIN.) @ f=12GHzApplication·L to K band low noise amplifiers.S...

MGF431xG Data Sheet

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Part Number:
MGF431xG
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

·Low noise figure @ f=12GHz
·MGF4316G : NF min.=0.80dB (MAX.)
·MGF4319G : NF min.=0.50dB (MAX.)
·High associated gain
·Gs=12.0 dB (MIN.) @ f=12GHz


Application

·L to K band low noise amplifiers.


Specifications

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-4
V
Gate to source voltage
VGSO
-4
V
Drain current
ID
60
mA
Total power dissipation *1
PT
50
mW
Channel temperature
Tch
175
°C
Storage temperature
Tstg
65 /+175
°C



Description

The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers.

The hermetically sealed metal-ceramic package of MGF431xG assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.




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