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MGFC41V7177

Features: ·Internally matched to 50ohm system·High output power P1dB = 12W (TIP.) @ f=7.1 - 7.7 Hz·High power gain GLP = 9.5 dB (TYP.) @ f=7.1 - 7.7 GHz·High power added efficiency Eadd = 33 % (TYP.) @ f=7.1 - 7.7 GHz·Low Distortion[Item-51] IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.Application7.1 - 7.7GHz...

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MGFC41V7177: Features: ·Internally matched to 50ohm system·High output power P1dB = 12W (TIP.) @ f=7.1 - 7.7 Hz·High power gain GLP = 9.5 dB (TYP.) @ f=7.1 - 7.7 GHz·High power added efficiency Eadd = 33 % (TYP....

MGFC41V7177 Data Sheet

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Part Number:
MGFC41V7177
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Internally matched to 50ohm system
·High output power P1dB = 12W (TIP.) @ f=7.1 - 7.7 Hz
·High power gain GLP = 9.5 dB (TYP.) @ f=7.1 - 7.7 GHz
·High power added efficiency Eadd = 33 % (TYP.) @ f=7.1 - 7.7 GHz
·Low Distortion[Item-51] IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.


Application

7.1 - 7.7GHz band amplifiers


Specifications

Symbol
Parameter
Ratings
Unit
VGDO
VGSO
ID
IGR
IGF
PT
Tch
Tstg		 Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation *1
Channel temperature
Storage temperature
-15
-15
12
-30
63
53.6
175
65 to +175
V
V
A
mA
mA
W
DegreesC
DegreesC
*1 : Tc=25 DegreesC


Description

The MGFC41V7177 is an internally impedence matched GaAs power FET especially designed for use in 7.1 - 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high raliability.




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