MGF0916A Selling Leads, Price trend, MGF0916A DataSheet download, circuit diagram from SeekIC.com

Features: · High output powerPo=23dBm(TYP.) @f=1.9GHz,Pin=5dBm· High power gainGp=19dB(TYP.) @f=1.9GHz· High power added efficiencyhadd=30%(TYP.) @f=1.9GHz,Pin=5dBm· Hermetic PackageApplication· For UHF Band power amplifiersSpecifications Symbol Parameter Ratings Unit VGSO ...

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SeekIC No. : 004419812 Detail

MGF0916A: Features: · High output powerPo=23dBm(TYP.) @f=1.9GHz,Pin=5dBm· High power gainGp=19dB(TYP.) @f=1.9GHz· High power added efficiencyhadd=30%(TYP.) @f=1.9GHz,Pin=5dBm· Hermetic PackageApplication· For...

MGF0916A Data Sheet

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Part Number:: MGF0916A
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/26

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Description

Features:

· High output power
Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm
· High power gain
Gp=19dB(TYP.) @f=1.9GHz
· High power added efficiency
hadd=30%(TYP.) @f=1.9GHz,Pin=5dBm
· Hermetic Package

Application

· For UHF Band power amplifiers

Specifications

Symbol	Parameter	Ratings	Unit
V_GSO	Gate to sourcebreakdown voltage	-8	V
V_GDO	Gate to drain breakdown voltage	-8	V
I_D	Drain current	250	mA
I_GR	Reverse gate current	-0.6	mA
I_GF	Forward gate current	1.5	mA
P_T	Total power dissipation	1.5	W
T_ch	Cannel temperature	175	°C
T_stg	Storage temperature	-65 to +175	°C

Description

The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

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MGF0916A

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