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Position: Home > SiteMap > Index M > Page 925

Index M : MGS13002D,MGS1100,MGFC42V3436,

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  • MGS13002D

    Mfg:MOTOROLA    Vendor:Other    Category:Other    

  • MGS1100

    Vendor:Other    Category:Other    
    The Motorola MGS1100 carbon monoxiode(CO)sensor features a sensitive,thin film metal-oxide layer over an embedded micro-heater.The heater is used to raise the temperature of the film to enchance its sensitivity to CO.Thi...

  • MGS05N60D

    Vendor:Other    Category:Other    

  • MGRB2025CT

    Vendor:Other    Category:Other    

  • MGRB2018

    Vendor:Other    Category:Other    

  • MGRB1018.

    Vendor:Other    Category:Other    

  • MGR2025CT

    Vendor:Other    Category:Other    

  • MGR2018CT

    Vendor:Other    Category:Other    

  • MGR1018

    Vendor:Other    Category:Other    

  • MGP7N60ED

    Mfg:ON    Vendor:Other    Category:Other    

  • MGP7N60E

    Mfg:ON    Vendor:Other    Category:Other    

  • MGP4N60ED

    Mfg:ON    Vendor:Other    Category:Other    

  • MGP4N60E

    Mfg:ON    Vendor:Other    Category:Other    

  • MGP3006X6

    Mfg:428    Pack:Siemens    Vendor:Other    Category:Other    

  • MGP3006

    Mfg:N/A    Pack:N/A    D/C:N/A    Vendor:Other    Category:Other    

  • MGP2N60D

    Vendor:Other    Category:Other    

  • MGP21N60E

    Mfg:ON    Pack:TO    Vendor:Other    Category:Other    

  • MGP20N63CL

    Vendor:Other    Category:Other    

  • MGP20N60U

    Mfg:ON    Pack:TO    Vendor:Other    Category:Other    

  • MGP20N40CL

    Mfg:N/A    Pack:NA/    D/C:09+    Vendor:Other    Category:Other    

  • MGP20N35CL

    Mfg:ON    Pack:TO    Vendor:Other    Category:Other    

  • MGP20N14CL

    Mfg:ON    Vendor:Other    Category:Other    

  • MGP15N60U

    Mfg:ON    Vendor:Other    Category:Other    

  • MGP15N43CL

    Mfg:ON    Pack:TO    Vendor:Other    Category:Other    

  • MGP15N40CL

    Mfg:ON    D/C:06+    Vendor:Other    Category:Other    

  • MGP15N38CL

    Mfg:ON    Pack:TO    Vendor:Other    Category:Other    

  • MGP15N35CL

    Mfg:ON    Pack:TO    Vendor:Other    Category:Other    

  • MGP14N60E

    Mfg:ON    Vendor:Other    Category:Other    

  • MGP11N60ED

    Mfg:ON    Pack:TO    Vendor:Other    Category:Other    

  • MGP11N60E

    Mfg:ON    Pack:TO    Vendor:Other    Category:Other    

  • MGM3000X

    Mfg:7600    Pack:SIEMENS    Vendor:Other    Category:Other    
    The monolithic integrated circuit MGM 3000X is especially suitable as a modulator for the 48 to 860 MHz frequency range.Video recorders, cable converters, TV-converter networks, demodulators, video generators, video secu...

  • MGM 3000X

    Vendor:Other    Category:Other    
    The MGM 3000X RF-oscillator is available at pins 3 - 7. The oscillator operates as a symmetrical Colpitts circuit. The MGM 3000X oscillator chip ground, pin 5, should be connected to ground at the resonance circuit shie...

  • MGLS12864TZ-10

    Vendor:Other    Category:Other    
    The MGLS12864TZ-10 features: • 128 x 64 dot matrix STN Positive Yellow Transflective LCD graphic module.• Driving scheme: 1/64 duty, 1/9 bias.• Viewing direction: 6 O'clock.• 'TOSHIBA' T6963C-01...

  • MGLS12864T-65

    Vendor:Other    Category:Other    
    This is the general description of MGLS12864T-65:The first one is 128 x 64 dot matrix FSTN LV2 positive black & white reflective dot matrix LCD graphic module. And secondly, viewing direction is 6 o'clock. Thir...

  • MGLS12864T-54

    Vendor:Other    Category:Other    
    The MGLS12864T-54 features: • 128 x 64 dots STN Negative Blue Transmissive LCD graphic module.• Driving scheme: 1:64 multiplexed drive, 1/9 bias.• Viewing direction: 6 O'clock.• 'TOSHIBA' T6963C ...

  • MGLS128128-54C

    Vendor:Other    Category:Other    
    The MGLS128128-54C features: 128 x 128 dots STN Positive Transflective Yellow LCD Graphic Module• Driving scheme: 1/128 duty, 1/12.4 bias.• Viewing direction: 12 o'clock.• 'Toshiba' T6963C-0101 flat p...

  • MGLS128128-19C

    Vendor:Other    Category:Other    
    MGLS128128-19C is a kind of LCD module type which has many unque features which is as follows: The first one is 128 x 128 dots STN Positive Yellow Transflective LCD graphic module. The second one is driving scheme w...

  • MGLS128128-02C

    Vendor:Other    Category:Other    
    The specification of LCD module type(MGLS128128-02C) are 128 x 128 dots STN positive yellow transflective LCD graphic module; driving scheme: 1:128 multiplexed drive, 1/12.4 bias; viewing direction: 6 O'clock; 'TOSHIBA' ...

  • MGH 1.5 Watts

    Vendor:Other    Category:Other    
    The MGH Series of DC/DC converters delivers 1.5 watts of output power in a labor saving surface mount package. The MGH Series of converters are offered with standard screening, "ES" screening, or fully compliant to "883...

  • MGFX36V0717

    Mfg:mitsubis    D/C:05+    Vendor:Other    Category:Other    

  • MGFS52BN2122A

    Vendor:Other    Category:Other    
    The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1-2.2GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. The MGFS52BN2122A has four f...

  • MGFS52B2122

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGFS48V2527

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    
    The MGFS48V2527 is a 60W push-pull type GaAs Power FET especially designed for use in 2.5 - 2.7GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFS48B2122

    Vendor:Other    Category:Other    
    The MGFS48B2122 is a 60W push-pull type GaAs Power FET especially designed for use in 2.11 - 2.17GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFS45V2527A

    Vendor:Other    Category:Other    
    The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFS45V2527

    Vendor:Other    Category:Other    
    The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFS45V2325

    Vendor:Other    Category:Other    
    The MGFS45V2325 is an internally impedance matched GaAs power FET especially designed for use in 2.3~2.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFS45V2123A

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFS45V2123

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    
    The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFS45B2527B

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGFS45A2527B

    Vendor:Other    Category:Other    
    The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFS44V2735

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFS39E2527

    Mfg:MITSUBISHI    Pack:DIP/SMD    D/C:08+    Vendor:Other    Category:Other    

  • MGFS36E2527

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGFS36E2325

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGFL48V1920

    Vendor:Other    Category:Other    
    The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFL45V1920A

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFK44A4045

    Vendor:Other    Category:Other    
    The MGFK44A4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFK41A4045

    Vendor:Other    Category:Other    
    The MGFK41A4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. The MGFK41A4045 ...

  • MGFK39V4045

    Mfg:MITSUBISHI    Pack:N/A    D/C:N/A    Vendor:Other    Category:Other    
    The MGFK39V4045 is an internally impedance matchedGaAs power FET especially designed for use in 14.0~14.5 GHz band amplifiers. The hermetically sealed metal-ceramic The MGFK39V4045 is an internally impedance matched pack...

  • MGFK38A3745

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGFK37V4045

    Mfg:MITSUBISHI    Pack:N/A    D/C:N/A    Vendor:Other    Category:Other    

  • MGFK33V4045

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFK30V4045

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    
    The MGFK30V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability

  • MGFK25V4045

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFC5218

    Vendor:Other    Category:Other    
    The MGFC5218 is a GaAs MMIC chip especially designed for 18.0 ~ 19.0 GHz band High Power Amplifier (MPA) .

  • MGFC5217

    Vendor:Other    Category:Other    
    The MGFC5217 is a GaAs MMIC chip especially designed for 18.0 ~ 19.0 GHz band Middle Power Amplifier (MPA) .

  • MGFC5216

    Vendor:Other    Category:Other    
    The MGFC5216 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Middle Power Amplifier (MPA) .

  • MGFC5215

    Vendor:Other    Category:Other    
    The MGFC5215 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band Middle Power Amplifier (MPA) .

  • MGFC5214

    Vendor:Other    Category:Other    
    The MGFC5214 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band High Power Amplifier (HPA) .

  • MGFC5213

    Vendor:Other    Category:Other    
    The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High Power Amplifier (HPA) .

  • MGFC5212

    Vendor:Other    Category:Other    
    The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High Power Amplifier (HPA) .

  • MGFC5211

    Vendor:Other    Category:Other    
    The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High Power Amplifier (HPA) .

  • MGFC5110

    Vendor:Other    Category:Other    
    The MGFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Low Noise Amplifier.(LNA) .

  • MGFC5109

    Vendor:Other    Category:Other    
    The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band Low Noise Amplifier.(LNA) .

  • MGFC5108

    Vendor:Other    Category:Other    
    The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 ~ 27.0 GHz band Low Noise Amplifier.(LNA) .

  • MGFC5107

    Vendor:Other    Category:Other    
    The MGFC5107 is a GaAs MMIC chip especially designed for 21.0 ~ 24.0 GHz band Low Noise Amplifier.(LNA) .

  • MGFC47V5864

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGFC47B3436B

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGFC47A7785

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGFC47A4450

    Vendor:Other    Category:Other    
    The MGFC47A4450 is device is an internally impendance-matched GaAs power FET especially designed for use in 4.4 to 5.0GHz band amplifiers.The hermetically sealed metal-ceramic package gurantees high reliability. The MGF...

  • MGFC45V6472A

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    
    The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFC45V5964A

    Vendor:Other    Category:Other    
    The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFC45V5867

    Vendor:Other    Category:Other    
    The MGFC45V5867 device is an internally impendance-matched GaAs power FET especially designed for use in 5.8 to 6.75GHz band amplifiers.The hermetically sealed metal-ceramic package gurantees high reliability. The MGFC4...

  • MGFC45V5053A

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    
    The MGFC45V5053A is an internally impedance matched GaAs power FET especially designed for use in 5.05~5.25 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFC45V4450A

    Vendor:Other    Category:Other    
    The MGFC45V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 - 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFC45V3642A

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    
    The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFC45V3436A

    Vendor:Other    Category:Other    
    The MGFC45V3436A is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFC45B3436B

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGFC44V5964

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGFC44V3642

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFC44V3436

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    
    The MGFC44V3436 is an internally impedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFC4419G

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    
    The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers.

  • MGFC42V6472A

    Vendor:Other    Category:Other    
    The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

  • MGFC42V5964A

    Pack:MIT    D/C:0-500    Vendor:Other    Category:Other    

  • MGFC42V5867

    Vendor:Other    Category:Other    
    The MGFC42V5867 is device is an internally impendance-matched GaAs power FET especially designed for use in 5.8 to 6.75GHz band amplifiers.The hermetically sealed metal-ceramic package gurantees high reliability. The MG...

  • MGFC42V5258

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFC42V4450

    Mfg:MITSUBSHI    Pack:MODULE    D/C:N/A    Vendor:Other    Category:Other    

  • MGFC42V3742

    Mfg:MITSUBISHI    Pack:N/A    D/C:N/A    Vendor:Other    Category:Other    

  • MGFC42V3436

    Vendor:Other    Category:Other    
    The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

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