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MGFC42V6472A

Features: ·Internally matched to 50 ohm system·High output power P1dB = 16W (TYP.) @ f=6.4 - 7.2 GHz·High power gain GLP =8.0 dB (TYP.) @ f=6.4 - 7.2 GHz·High power added efficiency P.A.E. = 31 % (TYP.) @ f=6.4 - 7.2 GHz·Low Distortion[Item-51] IM3=-45 dBc(TYP.)@Po=31.0dBm S.C.L.Application·item 0...

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MGFC42V6472A: Features: ·Internally matched to 50 ohm system·High output power P1dB = 16W (TYP.) @ f=6.4 - 7.2 GHz·High power gain GLP =8.0 dB (TYP.) @ f=6.4 - 7.2 GHz·High power added efficiency P.A.E. = 31 % (T...

MGFC42V6472A Data Sheet

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Part Number:
MGFC42V6472A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Internally matched to 50 ohm system
·High output power P1dB = 16W (TYP.) @ f=6.4 - 7.2 GHz
·High power gain GLP =8.0 dB (TYP.) @ f=6.4 - 7.2 GHz
·High power added efficiency P.A.E. = 31 % (TYP.) @ f=6.4 - 7.2 GHz
·Low Distortion[Item-51] IM3=-45 dBc(TYP.)@Po=31.0dBm S.C.L.




Application

·item 01 : 6.4 - 7.2 GHz band power amplifier
·item 51 : 6.4 - 7.2 GHz band digital radio communication




Specifications

Symbol
Parameter
Ratings
Unit
VGDO
VGSO
ID
IGR
IGF
PT
Tch
Tstg		 Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
-15
-15
15
-40
84
93.7
175
-65 / +175
V
V
A
mA
mA
W
deg.C
deg.C
*1 : Tc=25 Deg.C




Description

The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.






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