Features: ·RF frequency : 21.2 to 23.6 GHz·Linear gain : ³ 13 dB·P1dB : ³ 23 dBm·DC power : Vd = 5 V, Id1 + Id2 = 270 mASpecifications Symbol Parameter Ratings Units Vd1, Vd2 Drain supply voltage 6 V Vg1, Vg2 Gate supply voltage -3 ~0.5 V Id1 Drain current 1 12...
MGFC5211: Features: ·RF frequency : 21.2 to 23.6 GHz·Linear gain : ³ 13 dB·P1dB : ³ 23 dBm·DC power : Vd = 5 V, Id1 + Id2 = 270 mASpecifications Symbol Parameter Ratings Units Vd1, Vd2 ...
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Features: ·Class A operation·Internally matched to 50(ohm) system·High output power·P1dB = 4W (TYP...
Features: ·Class A operation·Internally matched to 50(ohm) system·High output power·P1dB = 4W (TYP...
Symbol | Parameter | Ratings | Units |
Vd1, Vd2 | Drain supply voltage | 6 | V |
Vg1, Vg2 | Gate supply voltage | -3 ~0.5 | V |
Id1 | Drain current 1 | 120 | mA |
Id2 | Drain current 2 | 240 | mA |
Pin | RF input power | 16 | dBm |
Ta | Backside ambient temp. | -20~ +70 | °C |
Tstg | Storage temp. | -65 ~+175 | °C |
Tmax | Maximum assembly temp. | +300 | °C |