Features: · Internally impedance matched· Flip-chip mounted· High output power P1dB = 1.1W(TYP.) @f=14.0-14.5GHz· High linear power gain GLP = 8.0dB(TYP.) í @f=14.0-14.5GHz· High power added efficiency· íP.A.E.ý24æèTYP.)íí@f=14.0-14.5GHzApplicationFor use in 14.0-14.5GHz band amp...
MGFK30V4045: Features: · Internally impedance matched· Flip-chip mounted· High output power P1dB = 1.1W(TYP.) @f=14.0-14.5GHz· High linear power gain GLP = 8.0dB(TYP.) í @f=14.0-14.5GHz· High power added ef...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter | Ratings | Unit |
VGDO | Gate to drain voltage | -15 | V |
VGSO | Gate to source voltage | -15 | V |
ID | Drain current | 1000 | mA |
IGR | Reverse gate current | -3 | mA |
IGF | Forward gate current | 5 | mA |
PT | Total power dissipation | 11 | W |
Tch | Channel temperature | 175 | deg.C |
Tstg | Storage temperature | -65 / +175 | deg.C |
The MGFK30V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability