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MGFS45A2527B

Features: ·Class A operation·Internally matched to 50(ohm) system·High output power P1dB = 32W (TYP.) @ f=2.5 - 2.7 GHz·High power gain GLP = 12 dB (TYP.) @ f=2.5 - 2.7GHz·High power added efficiency P.A.E. = 40 % (TYP.) @ f=2.5 - 2.7GHz·3rd order IM distortion·IM = -45dBc (TYP.) @ f=2.5 - 2.7GHzA...

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MGFS45A2527B: Features: ·Class A operation·Internally matched to 50(ohm) system·High output power P1dB = 32W (TYP.) @ f=2.5 - 2.7 GHz·High power gain GLP = 12 dB (TYP.) @ f=2.5 - 2.7GHz·High power added efficienc...

MGFS45A2527B Data Sheet

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Part Number:
MGFS45A2527B
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Class A operation
·Internally matched to 50(ohm) system
·High output power P1dB = 32W (TYP.) @ f=2.5 - 2.7 GHz
·High power gain GLP = 12 dB (TYP.) @ f=2.5 - 2.7GHz
·High power added efficiency P.A.E. = 40 % (TYP.) @ f=2.5 - 2.7GHz
·3rd order IM distortion
·IM = -45dBc (TYP.) @ f=2.5 - 2.7GHz


Application

·item 01 : 2.5 - 2.7 GHz band power amplifier
·item 51 : 2.5 - 2.7 GHz band digital ratio communication


Specifications

Symbol
Parameter
Ratings
Unit
VGDO
VGSO
PT *1
Tch
Tstg		 Gate to drain voltage
Gate to source voltage
Total power dissipation
Channel temperature
Storage temperature
-20
-10
107
175
-65 / +175
V
V
W
deg.C
deg.C
*1 : Tc=25deg.C


Description

The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.




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