MGFC45V5867

The MGFC45V5867 device is an internally impendance-matched GaAs power FET especially designed for use in 5.8 to 6.75GHz band amplifiers.The hermetically sealed metal-ceramic package gurantees high reliability.

The MGFC45V5867 has four features.The first one is class A operation.The second one is internally matched to 50(ohm) system.The third one is high output power P1dB = 45.0dBm(TYP.) @f=5.8-6.75GHz.The fourth one is high power gain GLP = 9dBm(TYP.) @f=5.8-6.75GHz.

The MGFC45V5867 has some absolute maximum ratings(Ta=25deg.C).When symbol is VGDO,the parameter is gate to drain voltage,the ratings is -15,the unit is V.When symbol is VGSO,the parameter is gate to source voltage,the ratings is -15,the unit is V.When symbol is ID,the parameter is drain current,the ratings is 20,the unit is V.When symbol is IGR,the parameter is reverse gate current,the ratings is -80,the unit is mA.When symbol is IGF,the parameter is forward gate current,the ratings is 168,the unit is mA.When symbol is PT,the parameter is total power dissipation,the ratings is 150,the unit is W.When symbol is Tch,the parameter is channel temperature,the ratings is 175,the unit is deg.C.When symbol is Tstg,the parameter is storage temperature,the ratings is -65 to +175,the unit is deg.C.Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable,but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs,with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap.