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MGFS45V2123

Features: ·Class A operation·High power gain·GLP=12dB (TYP.) @f=2.1~2.3GHz·High power added efficiency·hadd=45% (TYP.) @f=2.1~2.3GHz·Loe distortion [item -51]·IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.·High output power·P1dB=30W (TYP.) @f=2.1~2.3GHz·Internally matched to 50 (W) systemApplication·item 0...

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SeekIC No. : 004419933 Detail

MGFS45V2123: Features: ·Class A operation·High power gain·GLP=12dB (TYP.) @f=2.1~2.3GHz·High power added efficiency·hadd=45% (TYP.) @f=2.1~2.3GHz·Loe distortion [item -51]·IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.·H...

MGFS45V2123 Data Sheet

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Part Number:
MGFS45V2123
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

·Class A operation
·High power gain
·GLP=12dB (TYP.) @f=2.1~2.3GHz
·High power added efficiency
·hadd=45% (TYP.) @f=2.1~2.3GHz
·Loe distortion [item -51]
·IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.
·High output power
·P1dB=30W (TYP.) @f=2.1~2.3GHz
·Internally matched to 50 (W) system


Application

·item 01 : 2.1~2.3GHz band power amplifier
·item 51 : 2.1~2.3GHz band digital radio communication


Specifications

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-15
V
Gate to source voltage
VGSO
-15
V
Drain current
ID
22
A
Reverse gate current
IGR
-61
mA
Forward gate current
IGF
76
mA
Total power dissipation *1
PT
88
W
Channel temperature
Tch
175
°C
Storage temperature
Tstg
65 /+175
°C



Description

The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.




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