Features: ·Class A operation·Internally matched to 50 (W) system·High output power·P1dB=30W (TYP.) @f=2.5~2.7GHz·High power gain·GLP=12dB (TYP.) @f=2.5~2.7GHz·High power added efficiency·hadd=45% (TYP.) @f=2.5~2.7GHz·Loe distortion [item -51]·IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.Application·item 0...
MGFS45V2527: Features: ·Class A operation·Internally matched to 50 (W) system·High output power·P1dB=30W (TYP.) @f=2.5~2.7GHz·High power gain·GLP=12dB (TYP.) @f=2.5~2.7GHz·High power added efficiency·hadd=45% (T...
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Parameter |
Symbol |
Ratings |
Unit |
Gate to drain voltage |
VGDO |
-15 |
V |
Gate to source voltage |
VGSO |
-15 |
V |
Drain current |
ID |
22 |
A |
Reverse gate current |
IGR |
-61 |
mA |
Forward gate current |
IGF |
76 |
mA |
Total power dissipation *1 |
PT |
88 |
W |
Channel temperature |
Tch |
175 |
deg.C |
Storage temperature |
Tstg |
65 /+175 |
deg.C |
The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.