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MGFC44V3436

Features: ·Class A operation·High power gain·GLP=12dB (TYP.) @f=3.4~3.6GHz·High power added efficiency·P.A.E.=36% (TYP.) @f=3.4~3.6GHz·Loe distortion [item -51]·IM3= -45dBc (TYP.) @Po=33.5dBm S.C.L.·High output power·P1dB=25W (TYP.) @f=3.4~3.6GHz·Internally matched to 50 (W) systemApplication·item...

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SeekIC No. : 004419890 Detail

MGFC44V3436: Features: ·Class A operation·High power gain·GLP=12dB (TYP.) @f=3.4~3.6GHz·High power added efficiency·P.A.E.=36% (TYP.) @f=3.4~3.6GHz·Loe distortion [item -51]·IM3= -45dBc (TYP.) @Po=33.5dBm S.C.L....

MGFC44V3436 Data Sheet

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Part Number:
MGFC44V3436
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Class A operation
·High power gain
·GLP=12dB (TYP.) @f=3.4~3.6GHz
·High power added efficiency
·P.A.E.=36% (TYP.) @f=3.4~3.6GHz
·Loe distortion [item -51]
·IM3= -45dBc (TYP.) @Po=33.5dBm S.C.L.
·High output power
·P1dB=25W (TYP.) @f=3.4~3.6GHz
·Internally matched to 50 (W) system


Application

·item 01 : 3.4~3.6GHz band power amplifier
·item 51 : 3.4~3.6GHz band digital radio communication


Specifications

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-15
V
Gate to source voltage
VGSO
-15
V
Drain current
ID
20
A
Reverse gate current
IGR
-60
mA
Forward gate current
IGF
126
mA
Total power dissipation *1
PT
125
W
Channel temperature
Tch
175
deg.C
Storage temperature
Tstg
65 /+175
deg.C



Description

The MGFC44V3436 is an internally impedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.




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