MGFL48V1920

Features: ·Push-pull configuration·High output power·Pout = 60W (TYP.) @ f=1.9 - 2.0 GHz·High power gain·GLP = 11.5 dB (TYP.) @ f=1.9 - 2.0GHz·High power added efficiency·P.A.E. = 45 % (TYP.) @ f=1.9 - 2.0GHzApplication·1.9-2.0GHz band power amplifierSpecifications Parameter Symbol ...

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SeekIC No. : 004419926 Detail

MGFL48V1920: Features: ·Push-pull configuration·High output power·Pout = 60W (TYP.) @ f=1.9 - 2.0 GHz·High power gain·GLP = 11.5 dB (TYP.) @ f=1.9 - 2.0GHz·High power added efficiency·P.A.E. = 45 % (TYP.) @ f=1....

floor Price/Ceiling Price

Part Number:
MGFL48V1920
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

·Push-pull configuration
·High output power
·Pout = 60W (TYP.) @ f=1.9 - 2.0 GHz
·High power gain
·GLP = 11.5 dB (TYP.) @ f=1.9 - 2.0GHz
·High power added efficiency
·P.A.E. = 45 % (TYP.) @ f=1.9 - 2.0GHz



Application

·1.9-2.0GHz band power amplifier


Specifications

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-20
V
Gate to source voltage
VGSO
-10
V
Total power dissipation *1
PT
107.1
W
Channel temperature
Tch
175
deg.C
Storage temperature
Tstg
65 /+175
deg.C



Description

The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.


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