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MGFS45V2527A

Features: ·Class A operation·Internally matched to 50(ohm) system·High output power P1dB = 32W (TYP.) @ f=2.5 - 2.7 GHz·High power gain GLP = 12 dB (TYP.) @ f=2.5 - 2.7GHz·High power added efficiency P.A.E. = 45 % (TYP.) @ f=2.5 - 2.7GHz·Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L...

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MGFS45V2527A: Features: ·Class A operation·Internally matched to 50(ohm) system·High output power P1dB = 32W (TYP.) @ f=2.5 - 2.7 GHz·High power gain GLP = 12 dB (TYP.) @ f=2.5 - 2.7GHz·High power added efficienc...

MGFS45V2527A Data Sheet

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Part Number:
MGFS45V2527A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Class A operation
·Internally matched to 50(ohm) system
·High output power P1dB = 32W (TYP.) @ f=2.5 - 2.7 GHz
·High power gain GLP = 12 dB (TYP.) @ f=2.5 - 2.7GHz
·High power added efficiency P.A.E. = 45 % (TYP.) @ f=2.5 - 2.7GHz
·Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.




Application

·item 01 : 2.5 - 2.7 GHz band power amplifier
·item 51 : 2.5 - 2.7 GHz band digital radio communication




Specifications

Symbol
Parameter
Ratings
Unit
VGDO
VGSO
ID
IGR
IGF
PT *1
Tch
Tstg		 Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
-15
-15
22
-61
76
88
175
-65 / +175
V
V
A
mA
mA
W
deg.C
deg.C
*1 : Tc=25deg.C




Description

The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.






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