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MGFC45V5053A

Features: ·Internally matched to 50 (W) system·High output power·P1dB=32W (TYP.) @f=5.05~5.25GHz·High power gain·GLP=10.0dB (TYP.) @f=5.05~5.25GHz·High power added efficiency·P.A.E.=33% (TYP.) @f=5.05~5.25GHz·Low distortion [item -51]·IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.Application·5.05~5.25GHz b...

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MGFC45V5053A: Features: ·Internally matched to 50 (W) system·High output power·P1dB=32W (TYP.) @f=5.05~5.25GHz·High power gain·GLP=10.0dB (TYP.) @f=5.05~5.25GHz·High power added efficiency·P.A.E.=33% (TYP.) @f=5....

MGFC45V5053A Data Sheet

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Part Number:
MGFC45V5053A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Internally matched to 50 (W) system
·High output power
·P1dB=32W (TYP.) @f=5.05~5.25GHz
·High power gain
·GLP=10.0dB (TYP.) @f=5.05~5.25GHz
·High power added efficiency
·P.A.E.=33% (TYP.) @f=5.05~5.25GHz
·Low distortion [item -51]
·IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.


Application

·5.05~5.25GHz band amplifiers


Specifications

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-15
V
Gate to source voltage
VGSO
-15
V
Drain current
ID
20
A
Reverse gate current
IGR
-80
mA
Forward gate current
IGF
168
mA
Total power dissipation
PT
150
W
Channel temperature
Tch
175
Storage temperature
Tstg
65 /+175



Description

The MGFC45V5053A is an internally impedance matched GaAs power FET especially designed for use in 5.05~5.25 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.




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