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MGFC45V5964A

Features: ·Internally matched to 50 ohm system·High output power·P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz·High power gain·GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz·High power added efficiency·P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz·Low Distortion[Item-51]·IM3=-42 dBc(MIN.)@Po=34.5dBm S.C.L.Application·5.9 - ...

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MGFC45V5964A: Features: ·Internally matched to 50 ohm system·High output power·P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz·High power gain·GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz·High power added efficiency·P.A.E. = 33 % (T...

MGFC45V5964A Data Sheet

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Part Number:
MGFC45V5964A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Internally matched to 50 ohm system
·High output power
·P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz
·High power gain
·GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz
·High power added efficiency
·P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz
·Low Distortion[Item-51]
·IM3=-42 dBc(MIN.)@Po=34.5dBm S.C.L.




Application

·5.9 - 6.4 GHz band amplifiers




Specifications

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-15
V
Gate to source voltage
VGSO
-15
V
Drain current
ID
30
A
Reverse gate current
IGR
-60
mA
Forward gate current
IGF
126
mA
Total power dissipation
PT
125
W
Channel temperature
Tch
175
deg.C
Storage temperature
Tstg
65 /+175
deg.C





Description

The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.






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