Features: · Push-pull configuration·High output power Pout = 60W (TYP.) @ f=2.17 GHz· High power gain GLP = 12 dB (TYP.) @ f=2.17GHz· High power added efficiency P.A.E. = 48 % (TYP.) @ f=2.17GHzApplication·2.11-2.17GHz band power amplifier for W-CDMA Base StationSpecifications Parameter Sy...
MGFS48B2122: Features: · Push-pull configuration·High output power Pout = 60W (TYP.) @ f=2.17 GHz· High power gain GLP = 12 dB (TYP.) @ f=2.17GHz· High power added efficiency P.A.E. = 48 % (TYP.) @ f=2.17GHzAppl...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Ratings |
Unit |
Gate to drain voltage |
VGDO |
-20 |
V |
Gate to source voltage |
VGSO |
-10 |
V |
Total power dissipation *1 |
PT |
125 |
W |
Channel temperature |
Tch |
175 |
°C |
Storage temperature |
Tstg |
65 /+175 |
°C |
The MGFS48B2122 is a 60W push-pull type GaAs Power FET especially designed for use in 2.11 - 2.17GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.