MGFS48B2122

Features: · Push-pull configuration·High output power Pout = 60W (TYP.) @ f=2.17 GHz· High power gain GLP = 12 dB (TYP.) @ f=2.17GHz· High power added efficiency P.A.E. = 48 % (TYP.) @ f=2.17GHzApplication·2.11-2.17GHz band power amplifier for W-CDMA Base StationSpecifications Parameter Sy...

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SeekIC No. : 004419938 Detail

MGFS48B2122: Features: · Push-pull configuration·High output power Pout = 60W (TYP.) @ f=2.17 GHz· High power gain GLP = 12 dB (TYP.) @ f=2.17GHz· High power added efficiency P.A.E. = 48 % (TYP.) @ f=2.17GHzAppl...

floor Price/Ceiling Price

Part Number:
MGFS48B2122
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

· Push-pull configuration
·High output power Pout = 60W (TYP.) @ f=2.17 GHz
· High power gain GLP = 12 dB (TYP.) @ f=2.17GHz
· High power added efficiency P.A.E. = 48 % (TYP.) @ f=2.17GHz





Application

·2.11-2.17GHz band power amplifier for W-CDMA Base Station




Specifications

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-20
V
Gate to source voltage
VGSO
-10
V
Total power dissipation *1
PT
125
W
Channel temperature
Tch
175
°C
Storage temperature
Tstg
65 /+175
°C





Description

The MGFS48B2122 is a 60W push-pull type GaAs Power FET especially designed for use in 2.11 - 2.17GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.






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