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MGFC45V6472A

Features: ·Class A operation·Internally matched to 50(ohm) system·High output power P1dB = 32W (TYP.) @ f=6.4-7.2 GHz·High power gain GLP = 8 dB (TYP.) @ f=6.4-7.2GHz·High power added efficiency PAE = 28 % (TYP.) @ f=6.4-7.2GHz·Low distortion [item -51] IM3=-42dBc(min.) @Po=34.5dBm S.C.L.·Thermal ...

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MGFC45V6472A: Features: ·Class A operation·Internally matched to 50(ohm) system·High output power P1dB = 32W (TYP.) @ f=6.4-7.2 GHz·High power gain GLP = 8 dB (TYP.) @ f=6.4-7.2GHz·High power added efficiency PAE...

MGFC45V6472A Data Sheet

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Part Number:
MGFC45V6472A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Class A operation
·Internally matched to 50(ohm) system
·High output power P1dB = 32W (TYP.) @ f=6.4-7.2 GHz
·High power gain GLP = 8 dB (TYP.) @ f=6.4-7.2GHz
·High power added efficiency PAE = 28 % (TYP.) @ f=6.4-7.2GHz
·Low distortion [item -51] IM3=-42dBc(min.) @Po=34.5dBm S.C.L.
·Thermal Resistance Rth(ch-c)=1.0 deg.C/W(MAX.)


Application

item 01 : 6.4-7.2 GHz band power amplifier
item 51 : 6.4-7.2 GHz band digital ratio communication


Specifications

Symbol Parameter Ratings Unit
VGSO Gate to sourcebreakdown voltage -15 V
VGDO Gate to drain breakdown voltage -15 V
ID Drain current 30 mA
IGR Reverse gate current -60 mA
IGF Forward gate current 126 mA
PT Total power dissipation 125 W
Tch Cannel temperature 175 °C
Tstg Storage temperature -65 to +175 °C



Description

The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.




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