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MGFC45V3642A

Features: ·Class A operation·Internally matched to 50(ohm) system·High output power·P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz·High power gain·GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz·High power added efficiency·P.A.E. = 36 % (TYP.) @ f=3.6 - 4.2GHz·Low distortion [item -51]·IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L...

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MGFC45V3642A: Features: ·Class A operation·Internally matched to 50(ohm) system·High output power·P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz·High power gain·GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz·High power added efficienc...

MGFC45V3642A Data Sheet

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Part Number:
MGFC45V3642A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Class A operation
·Internally matched to 50(ohm) system
·High output power
·P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz
·High power gain
·GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz
·High power added efficiency
·P.A.E. = 36 % (TYP.) @ f=3.6 - 4.2GHz
·Low distortion [item -51]
·IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.


Application

·item 01 : 3.6 - 4.2 GHz band power amplifier
·item 51 : 3.6 - 4.2 GHz band digital ratio communication


Specifications

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-15
V
Gate to source voltage
VGSO
-15
V
Drain current
ID
20
A
Reverse gate current
IGR
-80
mA
Forward gate current
IGF
168
mA
Total power dissipation *1
PT
150
W
Channel temperature
Tch
175
deg.C
Storage temperature
Tstg
65 /+175
deg.C



Description

The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.




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