MGFK39V4045

Features: ·Internally impedance matched·High output power·P1dB=8W (TYP.) @f=14.0~14.5GHz·High linear power gain·GLP=5.5dB (TYP.) @f=14.0~14.5GHz·High power added efficiency·hadd =20%(TYP.) @f=14.0~14.5GHz, P1dBApplication·For use in 14.0~14.5GHz band amplifiersSpecifications Parameter ...

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SeekIC No. : 004419922 Detail

MGFK39V4045: Features: ·Internally impedance matched·High output power·P1dB=8W (TYP.) @f=14.0~14.5GHz·High linear power gain·GLP=5.5dB (TYP.) @f=14.0~14.5GHz·High power added efficiency·hadd =20%(TYP.) @f=14.0~1...

floor Price/Ceiling Price

Part Number:
MGFK39V4045
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

·Internally impedance matched
·High output power
·P1dB=8W (TYP.) @f=14.0~14.5GHz
·High linear power gain
·GLP=5.5dB (TYP.) @f=14.0~14.5GHz
·High power added efficiency
·hadd =20%(TYP.) @f=14.0~14.5GHz, P1dB



Application

·For use in 14.0~14.5GHz band amplifiers


Specifications

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-15
V
Gate to source voltage
VGSO
-15
V
Drain current
ID
6.0
A
Reverse gate current
IGR
-18
mA
Forward gate current
IGF
36
mA
Total power dissipation *1
PT
42.8
W
Channel temperature
Tch
175
deg.C
Storage temperature
Tstg
65 /+175
deg.C



Description

The MGFK39V4045 is an internally impedance matchedGaAs power FET especially designed for use in 14.0~14.5 GHz band amplifiers. The hermetically sealed metal-ceramic The MGFK39V4045 is an internally impedance matched package guarantees high reliability.


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