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MGF1601B

Features: • High output power at 1dB gain compression P1dB=21.8dBm(TYP.) @f=8GHz• High linear power gain GLP=8dB(TYP.) @f=8GHzApplication·S to X band medium-power amplifiers and oscillators.Specifications Parameter Symbol Ratings Unit Gate to drain voltage ...

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SeekIC No. : 004419825 Detail

MGF1601B: Features: • High output power at 1dB gain compression P1dB=21.8dBm(TYP.) @f=8GHz• High linear power gain GLP=8dB(TYP.) @f=8GHzApplication·S to X band medium-power amplifiers and oscillat...

MGF1601B Data Sheet

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Part Number:
MGF1601B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• High output power at 1dB gain compression P1dB=21.8dBm(TYP.) @f=8GHz
• High linear power gain GLP=8dB(TYP.) @f=8GHz


Application

·S to X band medium-power amplifiers and oscillators.


Specifications

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-8
V
Gate to source voltage
VGSO
-8
V
Drain current
ID
250
mA
Reverse gate current
IGR
-0.6
mA
Forward gate current
IGF
1.5
mA
Total power dissipation *1
PT
1.2
W
Channel temperature
Tch
175
°C
Storage temperature
Tstg
65 /+175
°C



Description

The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package of MGF1601B assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.




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