MGF1402B

The MGF1402B is designed as one kind of low noise GaAs FET with an N-channel Schottky gate. This device is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package of MGF1402B assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

Features of the MGF1402B are:(1)low noise figure NFmin= 3.0dB(typ.) @ f=12GHz;(2)high associated gain Gs=8dB(typ.) @ f=12GHz;(3)high reliability and stability. This device can be used in S to X band low-noise amplifiers and oscillators.

The absolute maximum ratings of the MGF1402B can be summarized as:(1)gate to drain voltage: -6 V;(2)gate to source voltage: -6 V;(3)drain current: 100 mA;(4)total power dissipation: 360 mW;(5)channel temperature: 175;(6)storage temperature: -55 to +175. If you want to know more information such as the electrical characteristics about the MGF1402B, please download the datasheet in www.seekic.com or www.chinaicmart.com .