MGF0912A

The MGF0912A GaAs FET with an N-channel schottky gate,is designed for use L & S band amplifiers.

The MGF0912A has four features.The first one is high output power P1dB =41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm.The second one is high linear power gain GLP = 10.5dB(TYP.) @f=1.9GHz.The third one is high power added efficiency PAE = 38%(TYP.) @f=1.9GHz,Pin=33dBm. The fourth one is hermetic package.

The MGF0912A has some absolute maximum ratings(Ta=25deg.C).When symbol is VGDO,the parameter is gate to drain voltage,the ratings is -15,the unit is V.When symbol is VGSO,the parameter is gate to source voltage,the ratings is -15,the unit is V.When symbol is ID,the parameter is drain current,the ratings is 10,the unit is V.When symbol is IGR,the parameter is reverse gate current,the ratings is -30,the unit is mA.When symbol is IGF,the parameter is forward gate current,the ratings is 63,the unit is mA.When symbol is PT,the parameter is total power dissipation,the ratings is 53.6,the unit is W.When symbol is Tch,the parameter is channel temperature,the ratings is 175,the unit is deg.C.When symbol is Tstg,the parameter is storage temperature,the ratings is -65 to +175,the unit is deg.C.Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable,but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs,with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap.