MGF0921A Selling Leads, Price trend, MGF0921A DataSheet download, circuit diagram from SeekIC.com

Features: · High output powerPo=33dBm(TYP.) @f=1.9GHz,Pin=17dBm· High power gainGp=17dB(TYP.) @f=1.9GHz· High power added efficiencyhadd=40%(TYP.) @f=1.9GHz,Pin=17dBm· Hermetic PackageApplication· For UHF Band power amplifiersSpecifications Symbol Parameter Ratings Unit VGSO ...

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SeekIC No. : 004419817 Detail

MGF0921A: Features: · High output powerPo=33dBm(TYP.) @f=1.9GHz,Pin=17dBm· High power gainGp=17dB(TYP.) @f=1.9GHz· High power added efficiencyhadd=40%(TYP.) @f=1.9GHz,Pin=17dBm· Hermetic PackageApplication· F...

MGF0921A Data Sheet

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Part Number:: MGF0921A
Supply Ability:: 5000

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Upload time: 2024/11/22

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Description

Features:

· High output power
Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm
· High power gain
Gp=17dB(TYP.) @f=1.9GHz
· High power added efficiency
hadd=40%(TYP.) @f=1.9GHz,Pin=17dBm
· Hermetic Package

Application

· For UHF Band power amplifiers

Specifications

Symbol	Parameter	Ratings	Unit
V_GSO	Gate to sourcebreakdown voltage	-15	V
V_GDO	Gate to drain breakdown voltage	-15	V
I_D	Drain current	1800	mA
I_GR	Reverse gate current	-5.0	mA
I_GF	Forward gate current	15	mA
P_T	Total power dissipation	1	W
T_ch	Cannel temperature	175	°C
T_stg	Storage temperature	-65 to +175	°C

Description

The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

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MGF0921A

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